关键词：lmpact avalanche transit gap gan 

摘要：This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m~2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs.

红外与毫米波学报杂志要求:

{1}正文段落层次号一律使用阿拉伯数字（不出现前言、引言等之内的层次），顶行书写，层次号后空一格，一级标题前空一行。

{2}注释为对文章某一特定内容的解释或说明，均以脚注形式分散标注于正文页面下方，其序号为①②③……，每页重新编号，注释文字与标点应与正文一致。

{3}摘要中如采用非标准的术语、缩写词和符号等，均应在首次出现时予以说明。

{4}作者简介包括：姓名、性别、出生年月、毕业学校及所学专业、工作单位、职务职称、现从事的研究工作、已或专著情况。

{5}参考文献：按国家标准《文后参考文献著录规则》（GBT7714—2005）书写。

注：因版权方要求，不能公开全文，如需全文，请咨询杂志社